Superior Insulation and Strength – Premium Aluminum Nitride Solutions

Aluminum Nitride (AlN), as part of Group III Nitrides, boasts exceptional properties including superior thermal conductivity, electrical resistance, low thermal expansion and nontoxicity. AlN can be produced using methods like direct nitridation and carbothermal reduction of aluminum metal.

Valley Design’s AlN ceramic substrates provide fast heat dissipation and are an ideal material choice for hybrid, power and RF/ Microwave electronics applications. Their superior dielectric strengthening properties and insulation properties make AlN ceramic substrates the go-to material.

High Thermal Conductivity

Aluminium Nitride has seen tremendous demand due to technological advancements in electronic devices and equipment, particularly due to its superior thermal conductivity which allows efficient heat dissipation from electronic components. Furthermore, AlN protects these components from corrosion caused by high temperature environments while providing greater electrical insulation than BeO ceramic substrate.

With its excellent chemical stability, this material can withstand tough conditions such as oxidation, acid and alkali corrosion, high temperature applications and Ultraviolet (UV) light applications such as optoelectronics.

Aluminium Nitride differs from BeO in that it is non-toxic and safe to handle even in an industrial setting, as well as being directly metallized using DCB (Direct Copper Bonding), making it particularly useful in power electronics, RF/ microwave applications, epitaxial growth of gallium nitride-based semiconductor devices such as RF amplifiers and LEDs.

Excellent Electrical Insulation

Aluminum Nitride (AlNi) provides an environmentally-friendly alternative to Beryllium Oxide in hybrid, power and microwave electronics applications that need an electrically insulating, nontoxic substrate material. Furthermore, its low thermal expansion profile matches that of silicon wafer materials allowing for heat management while keeping high-powered electronics running at peak performance efficiency.

Aluminum Nitride serves an integral purpose in optoelectronics as it serves as the substrate for gallium Nitride (GaN) LEDs, improving device performance and longevity while its superior thermal management properties make it a vital component in thermal interface materials (TIMs) and other insulation layers.

Aluminum nitride differs significantly from most ceramic materials such as zirconia toughened alumina (ZTA) in that it can withstand rapid temperature changes without suffering thermal shock, while its excellent abrasion resistance makes it an excellent material to use on wear-resistant surfaces like sensors, bearings and parts of machine tools. Furthermore, its excellent thermal conductivity provides an efficient pathway for heat to dissipate rapidly within these harsh environments while improving tribological properties – essential properties in equipment designed to operate successfully within such harsh environments.

Low Thermal Expansion

Aluminum Nitride boasts an exceptionally low coefficient of thermal expansion (CTE), meaning that its temperature changes do not cause it to expand or contract significantly, making it an ideal substrate material for high-speed electronics and LED lighting applications where heat generation and power loss must be minimized.

Aluminum nitride is an outstanding electrical insulator, offering protection from current flow and energy leakage. As such, aluminum nitride makes an attractive material choice for electronic substrates, insulators, and components that must be compatible with gallium nitride-based LEDs.

AIN is an ideal nontoxic ceramic material for many high-performance Green Tech applications, including traction (trains and subway systems), power generation (wind energy and hydroelectric), hybrid electric vehicles where electricity generated during braking is recovered back into power generation, as well as thermal management devices like copper metalized aluminum nitride tapes or net-shaped 3-D device structures to meet rising thermal management demands. Surmet is developing new aluminum nitride products to address these increasing thermal management demands in these applications.

Excellent Corrosion Resistance

Aluminum Nitride is highly corrosion resistant and suitable for harsh environments where other materials cannot. It resists chemical attack from most acids and bases while boasting an extremely high glass transition temperature and abrasion resistance. Furthermore, Aluminum Nitride is nontoxic and biocompatible making it suitable for medical devices.

Aluminum nitride coating can be applied to various substrates such as tungsten carbide or stainless steel to provide anticorrosion and wear properties, and has successfully been deposited on components such as acoustic wave sensors, bearings and parts for machine tools.

Aluminium Nitride Ceramic has an exceptionally high thermal conductivity of 170W/mk, the highest among Valley’s ceramic materials. Due to its electrical insulation and dielectric properties, this material makes an excellent choice for printed circuit boards; additionally, its low thermal expansion enables designers of high power modules to use Aluminum Nitride Ceramic alongside silicon components when building modules.

Based on its superior tribological properties, Alumina-based coatings are widely utilized in various industrial applications like machining tools, cutting blades and optical filters. Furthermore, this base material serves as the backbone for microelectronics and LED lighting technologies.

High Strength

Aluminum nitride’s high strength makes it an excellent insulator material to use in electronic applications that demand superior mechanical properties, such as automotive or aerospace environments where vibration levels are high. Due to its low thermal expansion and electrical resistance properties, heat quickly dissipates from aluminum nitride circuit boards quickly so they do not overheat causing components within them to malfunction – something especially helpful in vibration environments such as automakers’ automotive dealerships or aerospace environments.

Thermal conductivity of up to 170 W/mK at room temperature and dielectric properties make Beryllium Oxide (beO) substrate materials ideal alternatives in many semiconductor applications, while its non-toxic nature enables machineing without risk or protective masks which would normally be required when working with beO substrate materials.

Tokuyama’s micro powder and granules boasting extremely low impurity levels combined with unique manufacturing techniques for nitride reduction help produce sintered bodies with exceptional physical properties, including strong mechanical strength, an array of surface finishing options and tolerances, and high thermal conductivity.